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Modulating the electronic properties of Ag/Au implanted 2D chalcogenide layer on polymers

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Published: May 31, 2025
DOI: https://doi.org/10.12681/hnpsanp.8158
Keywords:
Molybdenum Disulfide Ion Beam Sputtering Ion beam Implantation
Romana Miksova
Nuclear Physics Institute CAS, 250 68 Rez, Czech Republic
Giovanni Ceccio
Nuclear Physics Institute CAS, 250 68 Rez, Czech Republic
Josef Novák
Nuclear Physics Institute CAS, 250 68 Rez, Czech Republic
Anna Macková
Nuclear Physics Institute CAS, 250 68 Rez, Czech Republic and Department of Physics, Faculty of Science, Jan Evangelista Purkyně University in Ústí nad Labem, 400 96 Ústí nad Labem, Czech Republic
Abstract
The unique properties enable molybdenum disulfide (MoS2) exhibit great potential applications in the fields of electronic and optoelectronic devices. MoS2 is a typical two-dimensional (2D) layered material shows low band gap. MoS2 was developed on polyethylene terephthalate (PET) substrate for the construction of flexible devices with Ion beam sputtering (IBS). These MoS2/PET composites were enriched with Ag and Au using ion beam implantation with energy up to 1.8 MeV and ion fluences in the range of 5×1014 to 5×1015 cm-2. The implantation energy was chosen according to the SRIM simulation program to achieve the required depth for both ion species. Thickness of the MoS2 layer as well as Ag and Au depth profiles were examined using Rutherford backscattering method (RBS). Surface morphology before and after ion beam implantation was checked using Scanning electron microscopy (SEM). The electrical properties of prepared structures were characterized by 2-point configuration. Ion implantation has been shown to decrease sheet resistance.
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