Heavy-ion RBS characterization of multilayer TiNx-SiO2-Si structures
Περίληψη
Multilayer structures consisting of TiNx-SiO2-Si layers operating as MOS devices were constructed and tested for their electrical properties. RBS measurements were performed for the characterization of the structure of the devices. The results show a correlation between the structure found by RBS and the electrical performance of the devices.
Λεπτομέρειες άρθρου
- Πώς να δημιουργήσετε Αναφορές
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Aslanoglou, X., Evangelou, E., Konofaos, N., Dimitriades, C., Kossionides, E., & Kaliampakos, G. (2020). Heavy-ion RBS characterization of multilayer TiNx-SiO2-Si structures. Annual Symposium of the Hellenic Nuclear Physics Society, 9, 315–321. https://doi.org/10.12681/hnps.2793
- Τεύχος
- Τόμ. 9 (1998): HNPS1998
- Ενότητα
- Oral contributions