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Heavy-ion RBS characterization of multilayer TiNx-SiO2-Si structures

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Published: Feb 11, 2020
DOI: https://doi.org/10.12681/hnps.2793
X. Aslanoglou
E. Evangelou
N. Konofaos
Ch. Dimitriades
E. Kossionides
G. Kaliampakos
Abstract

Multilayer structures consisting of TiNx-SiO2-Si layers operating as MOS devices were constructed and tested for their electrical properties. RBS measurements were performed for the characterization of the structure of the devices. The results show a correlation between the structure found by RBS and the electrical performance of the devices.

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