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Oxygen Contamination of Multilayer TiNx — SiO2 — Si Structures found by Resonant RBS Analysis

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Published: Feb 1, 2020
DOI: https://doi.org/10.12681/hnps.2241
X. A. Aslanoglou
Department of Physics, The University of Ioannina
E. Evangelou
Department of Physics, The University of Ioannina
N. Konofaos
Department of Physics, The University of Ioannina
Ch. Dimitriades
Department of Physics, Aristotle University of Thessaloniki
E. Kossionides
Institute of Nuclear Physics, NRCPS "Demokritos"
G. Kaliampakos
Institute of Nuclear Physics, NRCPS "Demokritos"
G. Kriembardis
Institute of Nuclear Physics, NRCPS "Demokritos"
Abstract

Multi layer structures consisting of TiN — SÌO2 — Si layers operating as MOS devices were constructed and tested for their electrical properties. RBS and resonance reaction analysis were performed for the characterisation of the structure of the devices. The results show a correlation between the structure found by RBS and the electrical performance of the devices.

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