HNPS Advances in Nuclear Physics Banner

A study of the response of depleted type p-MOSFETs to electron dose

PDF
Published: Mar 8, 2019
DOI: https://doi.org/10.12681/hnps.2009
M. Fragopoulou
Department of Physics, Aristotle University of Thessaloniki
S. Stoulos
Department of Physics, Aristotle University of Thessaloniki
M. Zamani
Department of Physics, Aristotle University of Thessaloniki
E. Benton
Oklahoma State University
D. O'Sullivan
Dublin Institute of Advanced Studies
S. Siskos
Department of Physics, Aristotle University of Thessaloniki
T. Laopoulos
Department of Physics, Aristotle University of Thessaloniki
v. Konstantakos
Department of Physics, Aristotle University of Thessaloniki
G. Sarrabayrouse
CNRS Toulouse
Abstract

The p-MOSFET dosimeter studied in this work has been manufactured at LAAS- CNRS Laboratory in Toulouse France, for applications in personal and space dosimetry. They are proposed for proton, heavy ions and electron and photon dose measurements. The current study investigates the sensitivity of this new type of Metal-Oxide-Semiconductor field effect transistor (MOSFET) to electrons. The sensitivity of the new MOSFET based dosemeters to electrons is linear for wide dose ranges. The influence of the electrons energy on the dosemeters response is also investigated.

Article Details
  • Section
  • Oral contributions
References
Leroy C. and Rancoita P-G., 2007, Particle Interaction and displacement damage in Silicon device operated in Radiation Environments, Rep. Prog. Physics 70 493-625
Fragopoulou M, Konstantakos V, Zamani M, Siskos S, Laopoulos Th, Sarrabayrouse G., 2010, High sensitivity MOSFET-based neutron dosimetry Nuclear Inst. and Methods in Physics Research A 621 611-614
Chung J-B et al., 2009, Dodimetric characteristics of standard and micro MOSFET Dosemeters as in Vivo Dosemeter for Clinical Electron Beam, Journal of the Korean Physical Society 55 2566-2570
Sarrabayrouse G, Siskos S., 1998, Radiation dose measurement using MOSFETs IEEE Instr. Measur. Magaz. 1(3) 26-34
Kohno R, Nishio T, Miyagishi T, Hirano E, Hotta K, Kawashima M. and Ogino T., 2006, Experimental Evaluation of a MOSFET dosimeter for proton dose measurements, Phys. Med. Biol. 51 6077-6086
Fragopoulou M, Siskos S, Manolopoulou M, Zamani M and Sarrabayrouse G., 2009, Thermal Neutron dosimetry using MOSFET dosemeters Rad. Measurments 44 1006- 1008
Tsardaklis P, Laopoulos Th, Siskos S, Sarrabayrouse G., 2006, Instrumentation and measurement Technology Conference (IMTC 2006)
Ravotti F, Glaser M, Moll M, Ilgner Ch, Camanzi B and Holmes-Siedle A G 2005 Response of Radfet Dosimeters to high fluencies of Fast Neutrons IEEE Tran. Nuc. Sci. 52 No 4 959-965
Ristic G., Andelkovic M., Baksic A., 2012, Sensitivity of pMOS Dosimeters with Various Gate Oxide Thickness Int. Conf. RAD 125-128
Chatzigiannaki, A., Siskos S. And Sarrabayrouse G., Proceedings of World Congress on Medical Physics and Biomedical Engineering, Nice France, 14-19 Sept. 1997.
] Lee, N. H. Kim, S. H. Youk, G.U., Park , I.J. Kim, Y.M. Rad. Prot. Dos. 110 (2004) 277.
http://www.nist.gov/